Date of Award
2015
Document Type
Thesis
Degree Name
Bachelors
Department
Natural Sciences
First Advisor
Sendova, Mariana
Keywords
Simulation, Silicon, Edge Effect, Physics
Area of Concentration
Physics
Abstract
The intensity of mono-crystalline silicon's 522 cm-1 Raman mode is observed as a function of position I522(x) across the physical edge of a wafer. In the region near the edge, the intensity is enhanced up to 80% greater than the intensity observed on the wafer's interior. This enhancement is characterized empirically through the analysis of over 14 line scans. Three models are constructed to simulate the results of I522(x). The most effective model is analogous to an error function over three distinct regions along the line scan: interior silicon, the physical edge, and no-silicon. The simulations correlate well with experimental results and suggest potential applications in the detection of edges.
Recommended Citation
Fiorillo, A., "ANALYSIS AND MODELING OF EDGE EFFECTS THAT ARISE IN THE RAMAN SPECTRUM OF A SILICON WAFER" (2015). Theses & ETDs. 5022.
https://digitalcommons.ncf.edu/theses_etds/5022